The polycrystalline graphite substrate is located below the crucible in the thermal field structure of the polycrystalline furnace, adjacent to the graphite side plates on all four sides, and a directional solidification block below the graphite substrate.
The reasonable use of the graphite substrate can achieve a reasonable effect of the solid-liquid interface distribution of the polycrystalline silicon germanium in the process of crystal growth, which is beneficial to impurity impurity in the crystal growth process, and can greatly improve the overall quality of the crystal.
Technology energy and the environment are the two major issues in today's world. The extensive use of traditional energy sources has made environmental problems increasingly serious and poses a serious threat to the normal operation of human society. Effective use of clean, environmentally sound new energy is an inevitable choice in social history. Solar energy is a green renewable energy source that is inexhaustible, inexhaustible, and environmentally friendly. Among the effective use of solar energy, optoelectronics has been the fastest growing and most dynamic research field in recent years. Among them, silicon material is the main carrier for photoelectric utilization. The preparation of silicon crystals is the basis of photovoltaic cells. In the field of solar photovoltaic, the production of polycrystalline silicon ingots by means of directional solidification is a commonly used method. At the same time, the requirements for the thermal field of the polycrystalline furnace are also getting higher and higher. The high quality graphite backing and polycrystalline graphite parts can provide more quality silicon crystals and reduce production costs.
