The polycrystalline graphite cover is located above the top heater in the polycrystalline thermal field to provide a protection and thermal insulation effect. It is an indispensable graphite material in the polycrystalline thermal field.
The polysilicon ingot furnace is a silicon remelting device used to produce a large number of qualified solar grade polycrystalline silicon ingots. In the production, polycrystalline silicon that meets certain purity requirements is put into the furnace, heated, melted, oriented, crystallized, heat treated, and cooled out according to the process requirements. Such a core environment in which polycrystalline silicon remelts crystals is called a thermal field. The thermal field not only provides a large amount of thermal energy for the polysilicon melting, but also provides a reasonable temperature gradient field in the crystal growth process to obtain the desired polycrystalline silicon crystal.
The rational use of the polycrystalline graphite cover plate can effectively improve the thermal field structure of the polycrystalline silicon ingot furnace with the quality and weight of the polysilicon processing.
